IGB50N60TATMA1
IGB50N60TATMA1
Description:
IGBT 600V 100A 1.5V TO263-3
Fabricante:
INFINEON
Código de coincidencia (matchcode):
IGB50N60T
Rutronik No.:
IGBT1060
Unidad de embalaje:
1000
MOQ:
1000
Encapsulado:
TO263
Presentación:
REEL
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- V(CE)
- 600 V
- I(C)
- 100 A
- V(CEsat)
- 1.5 V
- Encapsulado
- TO263
- Bodydiode
- NO
- P(tot)
- 333 W
- Automoción
- NO
- t(r)
- 29 nS
- td(off)
- 299 nS
- td(on)
- 26 nS
- Montaje
- THT
- RoHS Status
- RoHS-conform
- Tecnología
- 2-20kHz
- Embalaje
- REEL
- Artículo fabricante
- SP000054922
- ECCN
- EAR99
- Número de tarifa aduanera
- 85412900000
- País
- Malaysia
- Clave-ABC
- A
- Plazo de entrega del proveedor
- 21 Semanas
Infineon's TRENCHSTOP™ IGBT technology leads to significant improvement of static as well as dynamic performance of the device due to combination of trench top-cell and filed stop concept. Combination of IGBT with soft recovery Emitter Controlled Diode further minimizes the turn-on losses. The highest efficiency is reached due to the best compromise between switching and conduction losses.
Summary of Features
- Lowest V ce(sat) drop for lower conduction losses
- Low switching losses
- Easy parallel switching capability due to positive temperature coefficient in V ce(sat)
- Very soft, fast recovery anti-parallel Emitter Controlled Diode
- High ruggedness, temperature stable behavior
- Low EMI emissions
- Low gate charge
- Very tight parameter distribution
Benefits
- Highest efficiency – low conduction and switching losses
- Comprehensive portfolio in 600V and 1200V for flexibility of design
- High device reliability
Target Applications
- UPS
- Solar Inverters
- Major Home Appliances
- Welding
- Air conditioning
- Industrial Drives
- Other hard switching applications