IPB009N03LGATMA1
IPB009N03LGATMA1
Description:
N-CH 30V 180A 1mOhm TO263-3
Fabricante:
INFINEON
Código de coincidencia (matchcode):
IPB009N03L G
Rutronik No.:
TMOSP8652
Unidad de embalaje:
1000
MOQ:
1000
Encapsulado:
D2PAK
Presentación:
REEL
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- Configuration
- N-CH
- V(DS)
- 30 V
- I(D)at Tc=25°C
- 180 A
- RDS(on)at 10V
- 0.95 mOhm
- Q(g)
- 227 nC
- P(tot)
- 250 W
- R(thJC)
- 0.6 K/W
- Logic level
- YES
- Mounting
- SMD
- Technology
- OptiMOS
- Fast bodydiode
- NO
- Automoción
- NO
- Encapsulado
- D2PAK
- RoHS Status
- RoHS-conform
- Embalaje
- REEL
- Artículo fabricante
- SP000394657
- ECCN
- EAR99
- Número de tarifa aduanera
- 85412900000
- País
- Malaysia
- Clave-ABC
- A
- Plazo de entrega del proveedor
- 67 Semanas
With the new OptiMOS™3 30V product family, Infineon sets new standards in power density and energy efficiency for discrete power MOSFETs. Lowest on-state resistance in small footprint packages make OptiMOS™3 30V the best choice for the demanding requirements of battery management, OR-ing, e-fuse and hot-swap application.
Summary of Features
- Lowest on-state resistance
- High DC and pulsed current capability
- Easy to design-in
Benefits
- Increased battery lifetime and system efficiency
- Saving space (reducing the number of devices needed)
- Saving costs
Target Applications
- Or-ing in power supply
- Hot-swap
- e-fuse
- Battery management
