Key features:

• 2x DDR4 speed
• PMIC for efficient power management
• On-die ECC
• 1.1V lower power consumption
• Up to 128 Gb Density with 4-Layer TSV
• RDIMM with precise temperature control

ATP’s DDR5 solutions are expected to deliver performance and reliability improvements over the previous generation, especially for critical computing applications.

As the next-generation DRAM specification, DDR5 is poised to exceed DDR4 in every way. DDR5 promises faster performance, higher memory bandwidth, higher densities, and a new power management structure that delivers better power efficiency. All of these advantages, and more, are expected to meet the ever-growing memory needs of present and future applications.

Both DDR4 and DDR5 dual-inline memory modules (DIMMs) still have 288 pins, but with DDR5’s higher bandwidth, this means it can transmit data faster. While the pin count is the same, DDR5 DIMMs will not fit in DDR4 sockets as the alignment key is located differently and the pinouts have been changed to accommodate the new features.