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  4. Gate Driver Ics
  5. INFINEON Gate Driver Ics
Por favor inicie sesión o regístrese para obtener información de precios personalizados, plazos de entrega y disponibilidad en tiempo real

2EDL8124GXUMA1

INFINEON
INFINEON SP005406435

La imagen puede diferir del original

2EDL8124GXUMA1

Description: LS-HS-GATE-DRIVER 4A VDSON-8 Fabricante: INFINEON Código de coincidencia (matchcode): 2EDL8124G Rutronik No.: ICGDRV1333 Unidad de embalaje: 6000 MOQ: 6000 Encapsulado: VDSON-8 Presentación: REEL
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Canales
2
I(lim,min)/Ch
4 A
Montaje
SMD
Diagnóstico
NO
T(j,min)
-40 °C
T(j,max)
150 °C
I(lim,max)/Ch
4 A
V(in,min)
-10 V
V(in,max)
20 V
Detección OL
NO
Automoción
NO
Encapsulado
VDSON-8
RoHS Status
RoHS-conform
Embalaje
REEL
Artículo fabricante
SP005406435
ECCN
EAR99
Número de tarifa aduanera
85423990000
País
Malaysia
Clave-ABC
C
Plazo de entrega del proveedor
18 Semanas

Dual-channel junction-isolated gate driver - EiceDRIVER™ 2EDL8024G

The EiceDRIVER™ 2EDL8024G dual-channel junction-isolated gate driver IC is designed for medium-voltage power MOSFETs in half-bridge applications such as telecom and datacom DC-DC converters.

This industry-leading 4 A version is recommended to reduce MOSFET switching losses. The 2EDL8024G permits operation of both channels independently. For this reason, it is the perfect choice for diagonally driven full-bridges on the primary side as well as for the synchronous rectification stage on the secondary side because it permits reduction of losses during the free-wheeling phase.

All gate driver ICs of the EiceDRIVER™ 2EDL8 family come in an industry-standard leadless package and pin-out.  All of them have an integrated 120 V boot-strap diode as well as a precise channel-to-channel propagation delay matching of +/- 2 ns.

Summary of Features

  • No need for external boot strap diode
  • Fast MOSFET switching
  • Strong pull-down current reduces risk of
  • return-on from switching noise
  • Low dead-time losses
  • Inherent shoot-through protection
  • -8 V/+15 V common mode rejection

Benefits

  • High power density
  • High efficiency
  • Strong MOSFET Reliability
  • High efficiency
  • Strong MOSFET reliability
  • Robust operation

Potential Applications

  • Telecom DC-DC converter
  • Datacom DC-DC converter
  • Two switch forward converter
  • Active clamp forward converter
  • Class D audio amplifier


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