2EDS8265HXUMA1
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- Canales
- 2
- I(lim,min)/Ch
- 4 A
- Montaje
- SMD
- T(j,min)
- -40 °C
- T(j,max)
- 150 °C
- I(lim,max)/Ch
- 8 A
- V(in,min)
- 3 V
- V(in,max)
- 3.5 V
- t(on)
- 0.03 µS
- t(off)
- 0.0315 µS
- Automoción
- NO
- Encapsulado
- DSO-16
- RoHS Status
- RoHS-conform
- Embalaje
- REEL
- Artículo fabricante
- SP001798558
- ECCN
- EAR99
- Número de tarifa aduanera
- 85423919000
- País
- Indonesia
- Clave-ABC
- A
- Plazo de entrega del proveedor
- 100 Semanas
Fast, robust, dual-channel, reinforced isolated MOSFET gate drivers with accurate and stable timing
The EiceDRIVER™ 2EDS8265H and 2EDS8165H are reinforced isolated gate drivers for secondary-side control over the mandatory safe isolation barrier in SMPS. The 2EDS8265H strong 4A/8A source/sink dual-channel gate driver comes with a very high 150V/ns CMTI (Common Mode Transient Immunity) for robust operation with fast CoolMOS™ and high power switching noise environment.
The very fast propagation delay of 37ns is provided with low variation over temperature and production which enables the power system design to achieve higher efficiency through very tight timing control across the safety isolation barrier. The 2EDS8165H with 1A/2A is available for smaller MOSFETs or PWM signal/data decoupling for very high power designs working with local boost drivers. Safety certificates in accordance with UL1577, VDE0884-10, IEC62368 and IEC60950 will be provided with these devices. The 2EDFS8xx5H parts come in wide-body 300 mil DSO16 packages.
Summary of Features
Product features
• Fast switching with accurate timing
• Optimized for area and system BOM
• Robust against switching noise
• Output- to-output channel isolation
• Input-to-output channel isolation
Benefits
Product benefits
• Efficiency gain and lower losses
• Improved thermal behavior at smaller form factor
• Protection and safe operation
• Flexible configurations
• Regulatory safety
System benefits
• Enabling higher system efficiency and higher power density designs
• Improving long term competitive cost position, integration and mass manufacturability
• Extending end-product lifetime by improving safe operation of power switches in normal and abnormal field (grid) conditions
• Lower EMI by ground isolation, driver proximity to MOSFETs or when using 4-pin Kelvin source MOSFETs
• Simplified safety approval through component (VDE884-x, UL1577 and system (IEC60950, IEC62368) certificates
Potential Applications
• Telecom DC-DC
• Server
• Industrial SMPS
• UPS
• Battery
• EV-Charging
• Smart Grid
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