IKW50N65SS5XKSA1
IKW50N65SS5XKSA1
Description:
IGBT 650V 50A +SIC-DIODE TO-247
Fabricante:
INFINEON
Código de coincidencia (matchcode):
IKW50N65SS5
Rutronik No.:
IGBT2908
Unidad de embalaje:
30
MOQ:
240
Encapsulado:
TO247-3
Presentación:
TUBE
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- V(CE)
- 650 V
- I(C)
- 80 A
- V(CEsat)
- 1.35 V
- Encapsulado
- TO247-3
- Bodydiode
- YES
- P(tot)
- 274 W
- Automoción
- NO
- t(r)
- 10 nS
- td(off)
- 140 nS
- td(on)
- 20 nS
- Montaje
- THT
- RoHS Status
- RoHS-conform
- Tecnología
- IGBT5
- Embalaje
- TUBE
- Artículo fabricante
- SP001668430
- ECCN
- EAR99
- Número de tarifa aduanera
- 85412900000
- País
- China
- Clave-ABC
- A
- Plazo de entrega del proveedor
- 28 Semanas
650 V, 50 A IGBT Discrete with CoolSiC™ diode
650 V, 50 A TRENCHSTOP™ 5 S5 IGBT co-packed with full-rated 6th generation CoolSiC™ Schottky barrier diode in TO-247-3 package
The 650 V hard-switching TRENCHSTOP™ 5 S5 IGBT technology addresses applications switching between 10 kHz and 40 kHz and due to high controllability and smooth switching behavior delivers not only high efficiency, but is easy to design-in.
Combination of the TRENCHSTOP™ 5 S5 IGBT technology with the freewheeling SiC Schottky barrier diodes further reduces switching losses at almost unchanged dv/dt and di/dt values.
Summary of Features
- Ultra-low switching losses due to the combination of TRENCHSTOP™ 5 IGBT and CoolSiC™ diode technology
- Very low on-state losses
- Benchmark switching efficiency in hard switching topologies
- Qualified according to JEDEC for target applications
- Pb-free lead plating; RoHS compliant
- Qualified for industrial applications according to the relevant tests of JEDEC 47/20/22
Benefits
- Highest efficiency
- Reduced cooling effort
- Increased power density
- Plug & play replacement of the pure silicon devices
- Easy upgrade of existing designs for higher efficiency
- Excellent for paralleling
- Power Management (SMPS) - Reference Design
- Solutions for solar energy systems
- Uninterruptible Power Supply (UPS)