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  5. INFINEON IGBTs
Por favor inicie sesión o regístrese para obtener información de precios personalizados, plazos de entrega y disponibilidad en tiempo real

AIGB50N65H5ATMA1

INFINEON
INFINEON SP001686024

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AIGB50N65H5ATMA1

Description: IGBT 650V 50A AECQ D2PAK SMD Fabricante: INFINEON Código de coincidencia (matchcode): AIGB50N65H5 Rutronik No.: IGBT2862 Unidad de embalaje: 1000 MOQ: 1000 Encapsulado: TO263-3 Presentación: REEL
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V(CE)
650 V
I(C)
80 A
V(CEsat)
1.65 V
Encapsulado
TO263-3
Bodydiode
NO
P(tot)
305 W
Automoción
AEC-Q(101)
t(r)
18 nS
td(off)
163 nS
td(on)
22 nS
Montaje
SMD
RoHS Status
RoHS-conform
Tecnología
TRENCHST.5
Embalaje
REEL
Artículo fabricante
SP001686024
ECCN
EAR99
Número de tarifa aduanera
85412900000
País
Malaysia
Clave-ABC
A
Plazo de entrega del proveedor
12 Semanas

World-class low-cost power for fast-switching applications in small SMD packages

Energy efficiency is the most important aspect for electric vehicles and hybrid vehicles. Therefore, Infineon has developed the 650 V TRENCHSTOP™ 5 AUTO technology with H5/F5 optimization to enable highest efficiency fast switching automotive applications such as On-Board Charger, PFC, DC/DC and DC/AC.

TRENCHSTOP™ 5 AUTO is an IGBT technology that enables world’s lowest losses for switching and conduction in its category. The resulting high efficiency enables either an increased cruising range or a downsizing of the batteries for electric vehicles. For hybrid vehicles, it helps to reduce overall fuel consumption. The great performance of TRENCHSTOP™ 5 AUTO offers a cost-optimized solution where engineers were used to use MOSFETs only.

Moreover, TRENCHSTOP™ 5 AUTO technology in an SMD housing, like the D²PAK (PG-TO263-3), even further decreases IGBT solution costs by reducing cost on  system and manufacturing level. This comes with the benefit of increased quality control due to automated processes.

Summary of Features

  • TRENCHSTOP™ 5 technology with low VCEsat, optimized as H5 variant (High Speed Variant) with softer switching behavior for easier design-in
  • 650V break-down voltage, 50A nominal current
  • Very fast switching (up to 150kHz)
  • Automotive qualified in accordance to Infineon quality standards
  • Max junction temperature 175 °C
  • Highest efficiency
    • very low conduction losses
    • very low switching losses
  • Very low junction and case temperature
  • SMD D2PAK package for low assembly costs and higher power density
  • Extremely robust

Potential Applications

  • On-Board Charger (mainly in the PFC stage)
  • DC-DC or DC-AC
  • Auxiliary drive (e.g. Motor drive)


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